Plasma Characteristics Of Mid-frequency Dual-targets Magnetron Sputtering System And Oxide Films Deposition Research

The development, principle and applications of magnetron sputtering technique are introduced in this paper. Deposition tecluiique and applications of MgO and Al₂O₃ films are also introduced.A mid-frequency unbalance dual-targets magnetron sputtering system is used to prepare MgO and Al₂O₃ films. Plasma characteristics of this system are studied.The causes of metallic state sputtering with Mg target are analyzed. During deposition process, the temperature of target increases for the bad cooling condition which increase the sputtering rate, so the metallic state sputtering is formed. Target evaporation can also be arisen in this process.MgO films are prepared in this system and their structure and thickness are measured. The results indicate that MgO (200) phase is formed in the films. Deposition parameters have great effects on the deposition rate of the MgO films. In some degree, the deposition rate of the MgO films increased with the O₂ partial pressure and sputtering power and bias voltage; gas pressures haven't influence to it.Er-doped Al₂O₃ films are prepared and photoluminescence (PL) spectrums are measured. XRD results indicated that Ei₄Al₂O₉ and Al₁0Er₆O₂4 phases are formed in the films after annealing compared with non-crystal without annealed. Low angle XRD indicates the films are multi-layer structure. The PL spectrums show that the peak of PL will decrease with increasing bias voltage, oxygen partial pressure and gas pressure. Moreover, the peak of PL will decrease acutely with deposition temperature increased. Increasing the thickness of films will enhance the peak of PL, and there is a saturated thickness at the constant pump power by Laser.