A Statistic Description Of The Physical Image Of Process To Capture--Recombine Carriers For The Twin Levels Of Au In Silicon

Applying the semiconductor statistic theory, and combining the surface photovoltaic effect and the cryogenic technology, the charge transfer mechanism at static state in silicon doped gold is studied. For the physical image of process to capture-recombine carriers for the twin levels of gold in silicon, a statistic description is given. For the obtained several statistic laws, they are respectively verified by formation of the relavant dynamic pbotovoltaic waveform at low temperature, so the relavant each capture cross section of carriers of the gold acceptor level and the doner level is estimated; Applying again measurement of the diffusion length of the minority-carrier, then the recombination lifetime dominated by the gold impurity in silicon can also beestimated,consequently the correctnessof this statisticdescription is verified further. Therefore, the correctness of understanding that the gold acceptor level and the doner level in silicon essentially originate from the same gold impurity is then supported forcefully , from based model in this work.