Structure And Properties Of A-C;F Films Deposited By CHF₃/C₆H₆ECR Plasmas

Fluorinated amorphous carbon films (a-C:F,H) were deposited by microwave cyclotron resonance plasma chemical vapor deposition (MWECR-CVD) using trifluoromethane (CHF3) and benzene (C61-16) as source gases. The structures and properties of a-C:F,H films were characterized by several analysis techniques, such as TEM, XRD, FTIR, XPS, UV-VIS,OES and so on. It was convinced that deposited a-C:F,H films are amorphous by both of TEM and XRD. FTIR measurements show that F mainly exists as C-F, CF2 bonds; XPS also indicates that carbon and F are C-F, CF2 chemically bonded in the films. The optical gap and F content of the films show the same trend varying powers. It is based on the fact that it was mainly influenced by radical contents and defect quantity. I-V characteristics show that the films have ohmic characteristic at low electric field and follow Schoftky emitting mechanism at high electric field.