Molecular Dynamics Simulation Of Carbon Atom Deposition At The Initial Stage Of SiC Growth

The surface relaxation of (001) Si and the deposition dynamics of Catom on Si (001) surface are studied by molecular dynamics method usingsemi-empirical many-body Tersoffpotential. The main results include that:the atoms in surface of (001) Si are rearranged and form bonding, there is aenergy threshold when the C atom deposit on the Si Surface; when incidentcarbon atom with higher energy the chemisorPtion with silicon substratecan occur easily; we also find that higher incident energy benefit to lowsubstYate temperature and realize the phase transformation of particle.These results have importan reference value for controlling experimenta1condition to synthesize high quality silicon-carbon at the low temperature.