Transmission Characteristics Of One-dimensional Chiral Photonic Structure With Negative Refraction Materials

As new types of photoelectronic functional materials, negative refraction materials and chiral materials attract more and more attentions for their unique properties and potential application in recent years. However, the research on optical communication devices made by negative refraction materials and chiral materials respectively is not sufficient.This thesis mainly focuses on the transmission of one-dimensional chiral photonic structure with negative refraction materials by using TMM (transfer matrix method), and analysis on characteristics of band gap is our primary duty.By using TMM, band gap of one-demensional photonic crystal is reproved firstly, and the properties of band gap of one-dimensional photonic structure with negative refraction materials are also introduced. What's more, the effects on band gap which include the number and thickness of dielectrics are considered, we also take into account influences of incident angle and the number of defect layers.In this thesis, the isusses with respect to monochromatic plane wave obliquely strikes single interface composed of negative refraction materials and chiral dielectrics are discussed by using phase matching condition and boundary condition. Meanwhile, the properties of band gap are analysised in one-dimensional chiral photonic structure containing negative refraction materials, the influential factors of media attributes for band gap are same as conventional situation mentioned in previous context. In addition, the cases of positive and negative mateials as defect layers are explored, and the differences between them are compared, too.The research shows that the role of negative refraction materials is widening photonic structure band gap. In comparison to achiral instance, effect of chiral dielectrics is separating the band gap of left and right circularly polarized light,and the divided distance will be wider when chirality parameters largen. Moreover, following with the number of dielectric layers increase, band gap of photonic structure becomes deeper; the position of band gap also shifts towards short wavelength as angle enlarges; furthermore, the numer of defect modes will be more with increase of defect layers.