Research On Broadband/Dual-Band High-Efficiency Amplifier Based On Ⅲ-Ⅴ Simiconductor Technology

With the development of modern wireless communication technology,the current microwave spectrum resources in low frequency band are crowded,making the existing wireless communication system constantly approaching the limits of bandwidth and rate,which is difficult to meet the pursuit of greater data capacity and higher data rate.Then,the millimeter-wave（mm-wave）frequency band gets more attention.As the key compo-nent of communication system,amplifer is also facing new challenges in terms of band-width,efficiency,linearity,etc.At the same time,due to the application of multi-band in the moder communication system,the out of band suppression in receiving and transmit-ting channels is limited,which will cuase serious interference.Thus,the“high efficiency”integration of the amplifiers and filters will pose a challenge without deteriorating the performance.Aiming at the above challenges,in this dissertation,an in-depth study on the broadband/dual band high efficiency amplifiers is carried out.Firstly,Broadband high saturation efficiency MMIC（Microwave Monolithic Inte-grated Circuit）power amplifiers are proposed.The high efficiency working principle of harmonic control in power amplifier is analyzed.And then,the technology based on the second harmonic control technology is proposed to improve the efficiency of the MMIC high output power amplifier（HPA）.It uses a simple second harmonic resonance structure at the input and output ends of the power stage transistor to improve the efficiency.Based on this technique,in this dissertation,a C-band high efficiency MMIC HPA is developed,which exhibits a saturated output power of 45-45.5 dBm with a power added efficiency（PAE）of 59-61.8%in the 5.6～6.3 GHz.In order to achieve a broadband high efficiency power amplifier（PA）for millimeter-wave communications,a Ka-band broadband high-efficiency Ga N MMIC HPA is developed.It exhibits an average saturated output power of 40-41.5 dBm（10-14 W）with a PAE of 29%-32.5%in 24～30 GHz.Secondly,Ka-band broadband high power back-off（PBO）efficiency MMIC PA is proposed.The design mothod of load modulation network（LMN）in Doherty PA is ana-lyzed.And then,a low loss compact LMN is proposed to address the problems of narrow bandwidth and low efficiency in Doherty PA caused by the serious parasitic parameters and high loss.The matching network and LMN are synergistically designed as a compact network to replace the conventional quarter-wavelength inverse impedance converter net-work,which improves the bandwidth of Doherty PA.Based on this structure,in this dis-sertation,a Ka-band watt-level broadband high efficiency Ga As Doherty PA MMIC is developed,which exhibits a measured saturation output power of 29.5-30 dBm,a peak PAE of 35%-40%,and a 6-dB PBO PAE of 25%-30.2%from 26.5 to 30.5 GHz.Thirdly,a Ka-band watt-level broadband high PBO high efficiency Ga As load mod-ulated balanced amplifier（LMBA）MMIC is proposed.The broadband high efficiency working principle of LMBA PA is analyzed in detail.And then,an improved RF single-input LMBA amplifier is proposed to address the problems of narrow bandwidth and small PBO rang caused by the limitations of Doherty PA architecture.It changes the work-ing types of balanced power amplifier and control power amplifier in traditional LMBA PA.Then,the load modulation process of LMBA PA only to occurs in the branch of bal-anced auxiliary amplifier when the output power reaches PBO level,making the output matching network of main and auxiliary power amplifiers need to consider only one load condition,which fundamentally expands the bandwidth of load modulation network.Based on this technique,in this dissertation,a Ka-band watt-level broadband high PBO high efficiency Ga As LMBA MMIC is developed,which exhibits a measured saturation output power of 29-29.8 dBm,a peak PAE of 26%-34%,and an 8 dB PBO PAE of 27.5%-32%from 24 to 30 GHz（22%）.In addition,A Ka-band high-efficiency concurrent dual-band Ga As MMIC PA is proposed.The design mothod of concurrent dual-frequency matching network is analyzed.And then,a low-loss compact dual-band output matching network and a dual-band band-pass filter network based on the composite right/left handed（CRLH）transmission line structure are proposed to improve the high performance of concurrent dual-band PA.Based on this technique,in this dissertation,a high efficiency Ka-band dual-band Ga As MMIC PA is developed.The proposed PA exhibits a saturation PAE of 51.3%and 49.5%at 29.6 GHz and 39 GHz,respectively.The PAE at 1-dB compression point(P_-1dB)is48.6%and 46.7%,at 29.6 GHz and 39 GHz,respectively.Finally,K/Ka-band high out-of-band rejection filtering Ga As MMIC amplifiers are proposed.The working principle of self-resonance zero in high-frequency capacitor is analyzed in detail.And then,the structure-reuse technology of the decoupling circuit at each branch of power supply and multi-zero control technology are proposed to address the current problems of insufficient out-of-band rejection capability of the transceiver channel and low efficiency in the amplifier and filter integration.It uses the self-resonant zero-point characteristic of the supply branch decoupling capacitor to realize the filtering integrated circuit without additional filtering circuits,which does not affect the circuit performance of the amplifier itself.Based on this technique,in this dissertation,millime-ter-wave integrated filtering Ga As MMIC amplifier with high out-of-band suppression are developed.The proposed Ka-band Ga As MMIC PA with filtering characteristic for the satellite communication operates at 26～32 GHz,which achieves a suppression of48-80 dBc in 16～21.5 GHz and a suppression of 38-60 dBc in 37～43 GHz.The pro-posed K-band Ga As MMIC low noise amplifier（LNA）with filtering characteristic for the satellite communication operates at 17.5～22 GHz with a tested noise figure is 1.1-1.3 dB,which achieves a suppression of 57-73 dBc in 4～10 GHz and a suppression of61-72 dBc in 27.5～32.5 GHz.