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Vapor-Phase Synthesis And Electric/Optoelectronic Properties Of Two-Dimensional CuCrS2 And CuScS2 Nanosheets

Posted on:2024-08-25Degree:DoctorType:Dissertation
Country:ChinaCandidate:X XuFull Text:PDF
GTID:1521307319463914Subject:Materials Physics and Chemistry
Abstract/Summary:PDF Full Text Request
Two-dimensional materials possess a range of distinctive characteristics,such as ultra-thin thickness,strong light-matter interaction,and adjustable band structure,which offer extensive prospects for applications in electronics,optoelectronics,and other fields.CuCrS2and Cu ScS2 are two emerging semiconductor materials,whose crystal structures consist of alternating stacking of Cu ion layers and[Cr S2]or[Sc S2]layers in the c-axis direction,with Cu ions confined within the two-dimensional layers.Moreover,the diversity of Cu ion hybrid orbitals for bonding results in various lattice sites in the two-dimensional layers,along with low migration energy barriers,which favor controllable ion migration and significant ion-electron coupling effects,and thereby hold crucial research values in phase transitions,memristors,optoelectronics,and artificial neural networks.Nevertheless,due to their non-van der Waals structures,which possess strong chemical bonds in the three-dimensional direction,and complex element compositions,the synthesis of two-dimensional samples of CuCrS2 and Cu ScS2 is particularly challenging,thereby severely limiting their research and applications in electronics and optoelectronics.Thus,this thesis focuses on the synthesis of high-quality two-dimensional CuCrS2 and Cu ScS2 nanosheets,investigating the properties of Cu ions confined in the two-dimensional layers,and exploring the room-temperature ferroelectricity resulting from the polarized Cu ion site in two-dimensional CuCrS2,as well as the photoelectric response characteristics of two-dimensional Cu ScS2based on the coupled ionic-electronic effects.The research content is as follows:(1)Ultra-thin CuCrS2 nanosheets(as thin as 3 nm)were synthesized by constructing a quartz U-shaped groove-limited growth space.Discrimination of the material’s Raman peaks vibration types was achieved through polarized Raman spectroscopy.The results indicate that the frequency of the A1 vibration mode associated with Cu ion vibrations along the c-axis is 322 cm-1.Temperature-dependent and laser power-dependent Raman testing showed that the harmonic vibrations of Cu ions in CuCrS2 nanosheets decreased as temperature or laser power increased,revealing the feature that interlayer Cu ions are easy to be disturbed by external fields.Furthermore,optical second harmonic generation(SHG)testing revealed that two-dimensional CuCrS2 nanosheets have a non-centrosymmetric structure.(2)CuCrS2 nanosheets exhibit controllable interlayer Cu ion displacement-induced stable room-temperature ferroelectricity and high Cu rie temperature(up to 700 K).Under ambient temperature,the phase and amplitude curves of the piezoresponse force microscopy test on CuCrS2 nanosheets exhibit significant hysteresis characteristics,and controlled reading and writing of ferroelectric domains have been achieved,revealing their two-dimensional ferroelectricity at room temperature.Additionally,CuCrS2 nanosheets display the characteristic of polarization locking between the in-plane and out-of-plane directions.The high Cu rie temperature of up to 700 K for two-dimensional CuCrS2 has been revealed by detecting the high-temperature SHG signals.Combining first-principles theoretical calculations and crystal structure analysis has revealed the source of the high Cu rie temperature:the ferroelectricity of two-dimensional CuCrS2 comes from the Cu ion displacement in the adjacent enantiomorphic tetrahedral sites.The Cu ions are confined to the two-dimensional[Cr S2]layer and form a stable Cu S4 tetrahedral bond with S.Due to the ABC-type stacking feature of CuCrS2,there are additional Cu -Cr bonds(bond length:2.77(?)),which lead to a potential barrier of 0.38 e V for a single Cu ion to transition from an ordered state to a disordered state,enabling its ordered ferroelectric polarization to be maintained even at high temperatures.(3)Using a quartz sleeve to construct a confinement-space-assisted gas-phase synthesis method has enabled the preparation of ultra-thin Cu ScS2 nanosheets(as thin as 10 nm).The AA stacking of Cu ScS2 increases the Cu -Sc distance to 3.31(?),weakening the metal-metal interaction in the material,and thus reducing the stability of interlayer Cu ions.This results in the Cu ions in the two-dimensional Cu ScS2 exhibiting long-range migration properties at room temperature.High-temperature SHG testing results show that the SHG signal of the material decreases with increasing temperature and disappears above 370 K.This indicates that the Cu ion bond stability is weak,and a slight temperature increase can cause the Cu ions to deviate from the non-centrosymmetric lattice sites.Furthermore,theoretical calculations show that the migration barrier for Cu ions between layers is about 0.24 e V.The low migration barrier promotes the ion migration characteristics of the two-terminal electrode devices of the Cu ScS2 nanosheets,which can be observed at room temperature.(4)In two-dimensional Cu ScS2 nanosheets,the controllable long-range migration of Cu ions induces tunable positive and negative photovoltaic responses.The I-V sweep curves of Cu ScS2 two-terminal devices under limited current exhibit reversible switching behavior between high-resistance and low-resistance states,with a current switch ratio of 102.Furthermore,by controlling the migration of Cu ions in Cu ScS2 nanosheets through electrical pulses,electrically modulated switching between high and low resistance states,as well as polarization direction tunable photovoltaic responses,have been achieved in the two-terminal devices.
Keywords/Search Tags:two-dimensional materials, non-van der Waals materials, copper-based chalcogenides, vapor-phase synthesis, optoelectronic devices
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