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Semiconductor photodiodes and electroabsorption in far-infrared mercury - cadmium - telluride

Posted on:1989-07-06Degree:Ph.DType:Dissertation
University:University of DelawareCandidate:Maltenfort, Andrew JohnFull Text:PDF
GTID:1478390017955286Subject:Electrical engineering
Abstract/Summary:
The far-infrared (FIR) portion (8-14;The Franz-Keldysh effect may be used to electrically shift the absorption of a semiconductor material from nonabsorbing to absorbing states for a given wavelength. We investigated the use of Franz-Keldysh Electroabsorption photodetector as an overload protected device at the 10.6;The MIS-type devices displayed photovoltaic response to optical excitation for wavelengths from 5...
Keywords/Search Tags:Semiconductor, Far-infrared
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