| We develop a new mathematical formulation to describe the physics of the electrolyte-insulator (E-I) interface of the blocking ion sensitive field effect transistor (ISFET). In this new formulation, the E-I interface is viewed as trapping centers for the ions (H;An ISFET pH sensor integrated with CMOS operational amplifiers is designed, fabricated, and evaluated. The ISFET sensor is first matched with a MOSFET at the differential input stage of a CMOS operational amplifier (called the 'ISFET-operational amplifier') to cancel out the temperature sensitivity. Then, the output of an 'ISFET-operational amplifier' with a Ta... |
