Growth of high indium content indium gallium arsenide on gallium arsenide substrates for optical applications

n this dissertation, the growth and device performance of high In content InGaAs quantum wells on GaAs substrates will be discussed. The motivation for this work is to produce devices on GaAs operating at 1.3 ;Observation of excitons and the quantum confined Stark effect (QCSE) at 1.3 ;These high In content quantum wells were used as the active layers in electroabsorption modulators. Modulators are optoelectronic devices which can form an essential link between sources and receivers in fiber optic systems. Quantum well electroabsorption modulators operate via electric field induced changes in the absorption of quantum wells. The first transmission electroabsorption modulator at 1.3...