| Graphene is a promising new material with excellent electrical and thermal properties (Hemani 2011). Their unique planar hexagonal carbons--carbon structure, as well as the sp2 hybridization that is responsible for excellent charge transport properties determine its electrical properties. Electron mobility's exceeding 200,000 cm2V--1 s--1 have been measured. These excellent properties make single layer graphene a suitable material for high-performance devices. The fact that monolayer graphene has no band gap makes it difficult to be used as a material for field-effect transistors. Since monolayer graphene has, these restrictions are due to no band gap; having a bilayer graphene will solve this problem. According to(Abderrazak , Houyem and Bel Hady Hmid, Emna Selmane ) bilayer graphene exhibit a gap under the application of an applied external electric field (Bao 2012). Some of the obstacles faced when growing graphene are, the current growth methods, especially chemical vapor deposition (CVD) and epitaxial growth (SiC) need a transfer step to transfer the graphene onto a preferred substrate. According to previous researchers, using a transfer process degrades the electrical properties of the graphene layer (Ahmad Umair and Hassan Raza 2012). In this work, an alternate unconventional growth method using radio frequency chemical vapor deposition shows that it is possible to obtain graphene directly onto the insulator (SiO2) or the Si substrate. Graphene growth was attempted on various substrates using radio frequency chemical vapor deposition and the conventional chemical vapor deposition. The growth of graphene was successful on Nickle evaporated on SiO2,Copper foil, Palladium and Platinum evaporated on SiO2. The results were confirmed by the Raman Spectroscopy test. |
