Instrumental development and applications of secondary ion mass spectrometry

The work presented in this dissertation involves the implementation of various instrumental modifications with the goal of extending and enhancing the analytical capabilities of the Cameca IMS-3f, a commercial high performance secondary ion mass spectrometer (SIMS). The modifications include a new PC based data system, fast atom bombardment source, cryogenic sample stage for low temperature depth profiling, and data acquisition and processing software.;Chapter 1 serves as an introduction to the basic principles of the SIMS technique and various analytical modes. Chapter 2 presents a more detailed description of the instrumentation used in this research, as well as a summary of the various modifications.;A detailed description of the PC based data system and its theory of operation is presented in Chapter 3. The new software and PC based digital image processing system are also discussed.;The implementation and characterization of a fast atom bombardment (FAB) source is presented in Chapter 4. The source was characterized with respect to dose rate (atoms/cm;The use of a cryogenic sample stage to study the primary ion beam induced Gibbsian segregation of Cu in Si during SIMS depth profiling is discussed in Chapter 5. The use of cryogenic depth profiling was shown to reduce the segregation effects and also provide insight into the mechanism of the segregation process.;Chapter 6 presents an ion yield and depth correction methodology which provided improved quantitative results for B (O bombardment) and As (Cs bombardment) dopants in multilayer samples (i.e. SiO...