| Having a variety of excellent physical and chemical properties, silicon carbide (SiC) is one of the most recently developed semiconductor materials. The successful SiC epitaxial growth on Si or other substrates, and crystal 6H-SiC substrate fabrication produced by sublimation technique further explored the possibility of making SiC devices for such extreme conditions as high temperature environment and high power. To date, technology has provided various growth techniques to produce SiC such as chemical vapor deposition (CVD), atomic layer epitaxy (ALE), high vacuum molecular beam epitaxy (HVMBE), and so forth. In the field of research and production, CVD is the most common technique to study SiC epitaxial growth.; In the field of SiC growth, most deposition of crystalline SiC on Si has utilized CVD with separate C- and Si-bearing precursors, normally requiring high temperatures of 1200 to 1360{dollar}spcirc{dollar}C, which creates a lot of thermal stress and defects, and directly affects the use of the materials. This situation has spurred the investigation of alternative precursors for SiC deposition based on the expectation of lower growth temperature and a simpler deposition process. In general, a precursor designed for this purpose would contain directly bonded Si and C atoms and decompose at relatively low temperatures into a film of stoichiometric SiC. Silacyclobutane (c-{dollar}rm Csb3Hsb6SiHsb2, SCB){dollar} is a cyclic molecule consisting of one Si atom bonded to two C atoms in a four-member ring structure which contains significant strain energy (16.8 eV/molecule) thereby reducing the decomposition temperature. This theoretical assumption is the foundation of this research.; In this investigation, the monocrystalline SiC films were grown at low temperature ({dollar}{lcub}sim900{rcub}spcirc{dollar}C) from silacyclobutane on Si, 6H-SiC for the first time as compared to the published data at high growth temperature. The result of reduced temperature SiC growth provides insights to our understanding of SiC growth and contributes to accelerating a variety of SiC/Si, SiC/SiC device applications such as SiC/Si HBT, homojunction and heterojunction diode.; The development of Si SOI structure by thermal bonding provides the higher integration of semiconductor devices, which stimulates the possibility of SiC SOI structure formation for SiC device integration as we shall see in the near future when SiC devices are improved. SiC growth from Si carbonization would find its new life even though it is limited by the nature of SiC growth on Si at high temperature, which usually creates voids inside Si. Since SiO{dollar}sb2{dollar} is an excellent carbonization stop, such problem will be solved. Combining the advantages of SiC thin film growth and adopting the Si SOI structure concept, SiC SOI structure was developed by complete Si carbonization conversion directly from the device layer of commercial Si SOI wafer. Theoretically, such an approach could completely eliminate the voids formation and minimize the defects caused by SiC/Si lattice mismatch. As a result, the characteristics of the SiC film on SiO{dollar}sb2{dollar} were close to epitaxy SiC film. Also for the first time we cooperated with Duke University to successfully use 4{dollar}sp{lcub}primeprime{rcub}{dollar} SiC/Si wafer bond to a Si wafer, after etch back to form SiC SOI structure. These applications: visible range waveguiding, SiC CMOS, and high power devices will define the field. High density packing of SiC devices could be seen in the future. |
