| Extensive Raman-scattering studies have been performed in order to study the structure of ion-implanted GaAs, prior to any anneal. The spectroscopic evidence is consistent with a fine-scale mixture of amorphous and microcrystalline GaAs. Excessive bombardment with 120-keV SiF;Resonance-Raman experiments were carried out, using laser lines between 1.5 and 2.71 eV. The intensity of the a-GaAs spectral component was found to depend on scattering volume (optical penetration), thus providing an internal intensity standard allowing the effects of scattering volume and scattering efficiencies to be separated. The LO phonon was found to resonate approaching the E;A new Raman band was observed near 47 cm;Intensities of silicon local are observed to remain constant upon annealing, although conductivity increases by several orders of magnitude. The anneal primarily restores the mobility to that of crystalline GaAs.;A detailed chemical-etch damage depth profile has been completed for 45-keV Be... |
