The electrical, structural, and optical properties of aluminum nitride thin films deposited by atmospheric pressure metal-organic chemical vapor deposition

Aluminum nitride (AlN) thin films deposited on silicon (Si) and silicon carbide (6H-SiC) substrates were evaluated as a possible electrical insulator. The films were prepared by atmospheric pressure metal-organic chemical vapor deposition (MOCVD) over the temperature range from 300;The results suggest that the index of refraction and the film compositions are strongly dependent on the deposition temperature. The structure and surface morphology of the films as observed by X-ray, scanning electron microscopy (SEM), and atomic force microscopy (AFM) indicated depositions of polycrystalline AlN films. The AlN films prepared on Si at 450...