| A theory for interpreting carrier removal in terms of trap production has been derived from the carrier distribution function, which provides a relationship between the carrier removal rate and trap production rates due to the radiation damage. The carrier removal rate is a function of trap production as well as Fermi level position. Also, the carrier removal rate depends on many parameters, which are the density of states of the valance band as well as the conduction band, density of doping impurities, temperature, location of donor and acceptor energy levels and location of trap energy levels.; P-type and n-type silicon Schottky diodes are irradiated by cobalt 60 gamma rays. The experimental results show that the carrier removal rate is dependent on the initial carrier concentration. Carrier concentrations are determined by room temperature C-V measurements while the trap production rates are determined by DLTS from measurements from 50 K to room temperature.; A model presented by Williams, et al. for the carrier concentration vs. fluence, has been rederived from simple semiconductor carrier statistical mechanics. This model has then been extended to yield an expression for the initial carrier removal rate which depends on the production rate of each defect trap level in the band gap. We have tested these models thoroughly for the first time by measuring the trap production rates by DLTS, and then, using this information to calculate carrier removal rate and carrier concentration vs. fluence, we have verified that the results of the model can explain these same relationships obtained experimentally by C-V measurements. We believe that this is the first time that DLTS results have been linked directly to such simple and useful measurements as carrier removal rate and carrier concentration vs. fluence in a convincing manner. The success of this procedure also suggests that there are no "hidden" levels or traps which contribute to carrier removal rate but which do not show up in DLTS, at least in moderately doped n and p-type silicon. |
