In situ pyrometric interferometry monitoring and control growth and carbon doping of gallium arsenide and aluminum gallium arsenide in solid source molecular beam epitaxy

The dissertation covers two solid source molecular beam epitaxial (MBE) technology issues, in-situ monitor and control of growing epitaxial layers and carbon doping with an electron-beam heated source. In the first concern, the use of in-situ monitoring and closed-loop control techniques is vital to the development of reproducible MBE growth. Pyrometric Interferometry (PI) monitoring refers to the time-dependent recording of the filtered intensity of the thermal radiation emitted from the sample during epitaxial growth. As epitaxial material is being deposited, the incremental change in the optical path causes a quasi-sinusoidal modulation of the detected signal at the monitoring wavelength. A generalized physical model will be presented for PI, and a real-time closed loop control has been implemented in our MBE system at UCI. The AlAs/GaAs Distributed Bragg Reflectors (DBR) are grown and evaluated. Highly reproducible PI signals were measured on samples grown at different growth rates without any elaborate growth rate calibrations. Our custom designed detector circuit and data acquisition system has also been used to characterized PI signal of ;In the second concern, Carbon is an attractive replacement to Be as a p-type dopant for high reliable GaAs and Al...