Metalorganic vapor phase epitaxy of II-VI compound semiconductors and diluted magnetic semiconductors

II-VI compound semiconductors and diluted magnetic semiconductors (DMS) were grown in a vertical stagnation flow MOVPE reactor. The reactor was equipped with a split inlet configuration to inhibit parasitic, gas-phase prereactions. Films of ZnSe and ZnSSe were routinely deposited and characterized by standard techniques. Single-crystal line films were deposited at 666 K and 120 Torr with a growth rate of 4 m m/hr. The sources used for Zn, S, and Se were dimethylzinc triethylamine, hydrogen sulfide, and hydrogen selenide.; ZnFeSe was grown for the first time in a MOVPE reactor using iron pentacarbonyl as the Fe source. The bandgap energy and surface roughness of the ZnFeSe films increased with x. ZnFeSe is a DMS with potential application in optical devices such as modulators, isolators, and switches.; Doping of ZnSe was attempted using tertiary butylamine (tBNH2) as the doping source. Vapors of tBNH2 were transported to the reactor by flowing hydrogen through a liquid bubbler. Abnormal behavior of the devices constructed from the nitrogen doped ZnSe films was observed.; Multilayer structures composed of alternating layers of Fe and ZnSe were investigated. The crystallinity of the structures was dependent on the initial layer. Fe films were deposited on GaAs (100) wafers at 573 K and 666 K. The films deposited at the lower temperature were more uniform.; An effort to combine the techniques of evaporation and MOVPE was made. Transition metal elements for which liquid sources were not available were targeted for the purpose of creating novel DMS films. Clustering of the evaporating atoms and desorption of water from the reactor walls lead to the formation and deposition of powders.; Experiments were performed to study the thickness uniformity in a multi-aperture reactor. ZnSe was deposited on Si (100) wafers. The resulting thickness variation was measured using the colored fringe patterns exhibited by the interference with light. Thickness uniformity was demonstrated over a 1 cm diameter area using a coaxial split inlet. Experiments indicated the use of a multi-aperture distributor could extend the uniformity over the entire 2" diameter wafer.