| It is well known that thin film properties depends on its microstructures and the surface mobility is most important parameters to consider microstructures and to obtain high quality thin films. Thus, currently ion beam based deposition which can control surface mobility with kinetic energy of auxiliary gas ion investigated intensively.; Recently we developed the DMIBD system which can control ion beam energy precisely under 500Ev and also ion beam flux, independently. In this work, the optimum process parameters of DMIBD such as secondary ion yields, ion/atom arrival ratios, ion energy spread, and deposition rates for various metal targets were measured as functions of Cs+ ion bombarding energy, Cs+ ion dose, and secondary ion beam energy, respectively. From the results, the secondary ion yields for C,Al,Si,Cu,Ta, and W were about 20% and the ion energy spread also less than 10% regardless of the ion beam energy.; In order to investigated the effect of secondary ion beam energy on the thin film properties such as micro structural, electrical, optical properties and surface morphology, we deposit poly Si and poly ITO thin film as a function of ion beam energy by using DMIBD system. The XRD measurements revealed that the beginning of polycrystalline of Si thin film appeared at 500°C and AFM measurements for ITO thin film deposited with different ion beam energies show the change of grain size and surface morphology. The optical transmittance and resistivity of ITO thin film reached more than 90% in the visible light region and 4 × 10−4 Ωcm. at 50eV, respectively. In addition, the relation between ion beam energy and surface mobility, step coverage and trench filling performance increased with ion beam energy. Development of this DMIBD technique ensure the lower temperature process and higher quality for polycrystalline Si and ITO thin film manufacturing than that of conventional deposition process such as magnetron sputtering or evaporator techniques. |
