Monte Carlo simulation of MeV ion implantation with computationally efficient models

A computationally efficient model for MeV ion implantation has been developed taking advantage of previously developed electronic stopping model and the Kinchin-Pease damage model. The computational efficiency of MeV ion implantation simulation has been greatly improved with a new search-for-target algorithm without significantly increasing the runtime memory requirement. The impurity profiles calculated by this model are in excellent agreement with SIMS profiles over a wide range of implant conditions. This model is also able to predict the damage profiles with reasonable accuracy. The treatment of cascade atoms has led to a modified version of UT-Marlowe which is able to predict the oxygen recoil implant effect from overlaying oxide layers.