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High resistivity silicon radiation detectors

Posted on:1998-04-27Degree:Ph.DType:Dissertation
University:Stanford UniversityCandidate:Segal, Julie DianeFull Text:PDF
GTID:1462390014974696Subject:Engineering
Abstract/Summary:
This work addresses the use of silicon detectors both for charged particles in a high energy physics application, and for electromagnetic radiation, specifically x-ray and {dollar}gamma{dollar}-ray detectors.; The second generation of a PIN diode array pixel detector integrated with full twin well CMOS was developed for high energy particle physics. A new vertical high voltage diode termination structure was developed and compared to other diode termination structures through simulations. The new structure reduced the process complexity and improved the yield and robustness to mechanical damage to the backside, allowing us to build a much larger detector with denser frontside patterning, implementing a new sparse-field read-out design. Radiation measurements from this pixel detector are presented, which represent the first integrated sparse-field read-out results ever reported.; A prototype 1mm thick PIN diode array x-ray detector with a depletion voltage of 800V was simulated, designed and fabricated for protein crystallography. Using 2D simulations, an optimized 5 floating ring high voltage structure was designed and implemented. Preliminary measurements indicate that the detector can be operated successfully up to 1000V.; A new cylindrical drift detector was developed for x-ray absorbtion spectroscopy. To minimize the drift time, an analytic expression for drift field and 2D simulations were used to optimize the applied surface potential for a uniform drift field. Three novel integrated transistors for first stage amplification were designed and fabricated, which show promise of working with fairly straightforward optimization. A new technique for controlling dark current due to surface generation was introduced and implemented successfully. Instead of collecting the surface current at a guard anode, surface generation is suppressed by putting n{dollar}sp+{dollar} diffusion rings between the p{dollar}sp+{dollar} rings, dramatically reducing the depleted oxide interface area which is the site for surface generation. Using this technique, we built an 8mm diameter drift detector with full volume sensitivity. Two- and three-dimension transient simulations were used to study charge cloud evolution during the drift period. A problem was discovered which is common to PISCES based simulators: when a drift field is present, diffusion spread of the charge cloud is erroneously enhanced in the direction of and proportional to the drift field.
Keywords/Search Tags:Detector, Drift field, Radiation
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