| Ion implantation damage in silicon and ion irradiation induced surface smoothing and roughening process on metal and metallic alloys were studied. Defects were produced in Si by ion implantation. The initial state of damage, the onset temperature of interstitial mobility, the broader annealing behavior of the defects and the effect of surface on damage accumulation were studied using diffuse X-ray scattering, high resolution X-ray diffraction and transmission electron microscopy methods. A critical dose was observed during self-ion irradiation at 100°C for the conversion of small three-dimensional clusters in two-dimensional dislocation loops. The annealing behavior following self-ion irradiations shows different behavior from that following irradiation with inert gas ions. The surface was shown to be an effective sink for defects and that it plays an important role in defect accumulation during low energy implantation.; Ion induced surface smoothing and roughening processes were studied using Molecular Dynamics (MD) computer simulation. The simulations on self-ion bombarded W showed the effect of the surface on defect production and the roughening of the surface. The simulations on the CuTi, Ag and Ni with amorphous and crystalline states reveal the smoothing and roughening process due to a single ion impact. |
