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Applications of laser ablation inductively coupled plasma mass spectrometry for the analysis of solids

Posted on:2001-07-31Degree:Ph.DType:Dissertation
University:University of FloridaCandidate:Bi, Melody (Xiangqing)Full Text:PDF
GTID:1461390014957378Subject:Chemistry
Abstract/Summary:
Laser-sampling techniques, such as laser ablation (LA) inductively coupled plasma (ICP) mass spectrometry (MS), have gained popularity for analyzing solid materials because little or no sample preparation is required. Practical concerns such as the difficulty of obtaining or making matrix-matched standards prevent such techniques from becoming analytical tools. This work was largely concerned with studies of calibration strategies for trace analysis in solids and the feasibility of surface profiling by LA-ICP-MS. The capabilities of surface profiling by LA-ICP-MS were also explored.; By analyzing NIST soil and glass samples, a method for the determination of trace element concentrations by LA-ICP-MS using solution calibration and an internal standard has been studied and evaluated. In most cases, the measured element concentrations were within +/-15% of the certified values. The choice of an internal standard and the fractionation effect caused by laser irradiance on the surface of the sample were studied and discussed.; NIST archival leaf standards were used for reliable quantitative elemental analysis of Spanish moss samples by LA-ICP-MS. The results were compared with that obtained from microwave digestion (MD) ICP atomic emission spectrometry (AES) analysis. For most of the elements studied, the results for the two techniques agreed. A standard addition method was also studied and the results showed that it is an effective method when matrix-matched standards are not available.; LA-ICP-MS was applied to profiling of patterned thin metal layers on a polymer/silicon substrate. The parameters of the laser and ICP-MS operating conditions have been studied and optimized for this purpose. LA-ICP-MS has good sensitivity and was able to profile thin metal layers on the order of a few nm on the silicon surface. A lateral spatial resolution of 45 mum was achieved.; Finally, LA-ICP-MS was used to measure the amount of copper contamination on a silicon wafer surface. A detection limit of 6.1 x 1013 atoms/cm2 was obtained.
Keywords/Search Tags:Laser, Spectrometry, LA-ICP-MS, Surface
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