| hin-film copper indium diselenide (CIS) was prepared on plain as well as Mo-coated Corning 7059 glass substrates by a process which involves two steps: (a) the formation of copper indium oxide (CIO) by spray pyrolysis of an aqueous solution containing copper and indium nitrate; and (b) the subsequent reaction of the oxide with selenium vapor to form CIS. This new technique provided oxide and selenide films with good purity and uniformity on both, plain glass and Mo-coated glass substrates. During the oxide film formation, two film growth mechanisms could be observed. The deposition efficiency of the spray pyrolysis step was rather high and dependent on the spray parameters, and a slight preference for Cu was observed. Conversion of the oxide film to the selenide caused an increase in film thickness and a further increase in Cu content. The resulting specular CIS films were soft and adhered well to the substrate. The degree of reproducibility in thickness, composition and electrical parameters was found to be good. By varying the spray solution composition, the electrical parameters was found to be good. By varying the spray solution composition, the electrical parameters of CIS could be controlled and tuned for photovoltaic applications reproducibly by means of this cost-efficient fabrication technique.;Adhesion of the radio-frequency (RF) deposited Mo contacts to the Corning 7059 glass substrates was improved by introducing an air anneal step at 550;Preliminary solid-state photovoltaic (PV) devices were made from... |
