Characterization of Pt-H related defects in Si and intrinsic defects in ZnTe via optical and magnetic resonance methods

Infrared absorption, photoluminescence, and magnetic resonance studies are used in this dissertation to characterize point defects in single crystal silicon and zinc telluride semiconductors.;Two new defects in Si are observed by electron paramagnetic resonance (EPR). The first was observed in n-type Si doped with Pt and H, which had been irradiated with high-energy electrons. The defect's symmetry and approximate level position in the forbidden gap are determined. The second defect is observed in p-type Si again doped with Pt and H. Platinum's role in this defect is confirmed by the observed hyperfine structure.;In ZnTe, photoluminescence (PL) and optically detected magnetic resonance (ODMR) techniques are used to study intrinsic defects produced by in situ irradiation at 4.2 K. The properties of a Te Frenkel pair observed via ODMR are explored. The defect is also shown to be unstable under the injection of electron-hole pairs at 1.7 K. The properties of other centers that are also observed via ODMR after low temperature irradiation are also presented.;The dominant change in the PL spectrum of ZnTe after an in situ electron irradiation is the emergence of a band at 1.0 ;An infrared (IR) absorption study of Si doped with platinum and hydrogen identifies several Pt-H related defects. IR absorption bands arising from three charge states of a PtH...