Font Size:
a
A
A
Calculations of bulk and defect properties in binary and ternary semiconductors
Posted on:
1999-08-28
Degree:
Ph.D
Type:
Dissertation
University:
Michigan Technological University
Candidate:
Zapol, Peter
Full Text:
PDF
GTID:
1461390014467666
Subject:
Physics
Abstract/Summary:
The results of atomistic and density functional calculations to study bulk and defect properties of binary (GaN) and ternary (ZnGeP...
Keywords/Search Tags:
Bulk and defect properties
Related items
1
Multi-scale defect engineering and interface modification for enhancement of thermoelectric properties in nanostructured bulk materials
2
Control of defects in bulk indium phosphide crystals: The relationship between growth parameters and the control of crystallographic and electronic properties
3
Defect Characterization in 4H Silicon Carbide Bulk Crystals and Epilayers
4
Interaction Between NV And Ns Defects In Bulk Diamond
5
Defect studies in 4H- Silicon Carbide PVT grown bulk crystals, CVD grown epilayers and devices
6
Preparation And Properties Of Transition Metal-Based High Entropy Bulk Amorphous Alloys
7
Structure and its relation to the bulk properties of germanium-phosphorus-sulfur glass
8
Theory and Computation of Line Defect Fields in Solids and Liquid Crystal
9
Study On Microstructure And Properties Of Zr-based Bulk Metallic Glass
10
Research On The Mechanical Properties Of Cereal Flexible Intermediate Bulk Container