| We have developed a process for making sub-micrometer dimensional cantilevers, clamped beams, and more complicate electro-mechanical structures that carry integrated electrical leads. Such objects are perhaps useful as test structures for connecting to and measuring the electrical properties of molecular sized objects, as high frequency electromechanical components for radio and microwave frequency applications, and as sensor components for studying the fluctuation physics of small machines. Our process uses two realigned electron-beam lithography steps, a thin film angled deposition system, and differential removal of sacrificial aluminum layers to produce freely suspended sub-micron electromechanical components. We have produced cantilevers and beams on a variety of substrates (silica, silicon, and poly-imide) and have produced insulating, conductive, and multi-layer mechanical structures.; We have measured mechanical resonances in the 10 MHz range by electrostatically actuating the cantilevers while in a magnetic field (3500 gauss) and measuring the voltage that results across the front edge of the cantilever. Two structures are fabricated sharing a common ground so that a balanced detection technique can be used to eliminate background signals. Due to the square dependence of the electrostatic force on the voltage, they can be resonated by a drive voltage of 1/2 the natural frequency or at the natural frequency.; Two separate attempts have been made to apply these resonators. First, a process was developed to integrate a tunnel junction with the cantilever. These devices can possibly be used for probing small-scale systems such as molecules. We have verified the exponential variation of the tunneling resistance with both substrate flex and electrostatic gating.; Second, a novel gate structure was developed to create a double potential well for resonator motion. This is accomplished by placing a multilayer structure in front of the hairpin cantilever consisting two silver layers separated by a layer of aluminum oxide. By applying a voltage and measuring how the resonant frequency changes, the shape of the potential can be deduced. Ideally, the structure would produce a double potential well with well separation determined by geometry. The effect on the gate potentials on the resonant frequency was measured and compared to simple models. |
