Growth and characterization of type II indium gallium antimonide/indium arsenide strained layer superlattices

The main objective of this dissertation is the growth of strained layer superlattices (SLSs) composed of GaInSb and InAs for long wavelength infrared detection (LWIR). These detectors are designed utilizing a type II band SLS structure composed of individual layer thicknesses on the order of ten monolayers.; One of the main problems limiting the growth and development of long and very long wavelength infrared detectors (L and VLWIR) is the lack of a suitable, lattice matched substrate. Most commonly, GaAs(100) substrates are used in the development and growth of these SLS because of their cost and the availability of semi-insulating properties. Unfortunately these substrates have roughly an 8% lattice mismatch to the average LWIR SLS lattice. Closer are GaSb(100) substrates which are nearly latticed matched to the average LWIR SLS lattice, but all commercial GaSb substrates are of poor crystalline quality, making them highly absorbing and requiring thinning to allow the SLS to perform adequately. To overcome this problem several avenues were explored to develop a suitable substrate for the SLS detectors. Silicon-on-insulator (SOI) technology and wafer bonded 'compliant' substrates were examined as a means of mitigating the problems found with conventional (GaAs and GaSb) substrates.; Utilizing a systematic approach to growth optimization with respect to growth temperature, flux ratios, and interfacial layers, high-quality GaInSb/InAs SLS LWIR structures were grown. High-resolution x-ray diffraction combined with dynamical theory simulations indicates excellent structural periodicity and permits an extraction of structure composition. Cross-sectional transmission electron microscopic images reveal sharp heterointerfaces while atomic force microscopy indicates good surface morphology. The partial success and promise of 'compliant' substrates is discussed along with additional future work that may be beneficial to the development of these substrates.