| For the next generation of flat panel displays (FPDs), higher resolutions and sharp, full motion video are expected. To meet these requirements, high quality semiconductor material on glass substrates are a desirable way to fabricate the thin film transistors (TFTs) needed to drive the pixels and to quickly and precisely control the currents. Single crystal silicon films can be exfoliated onto Corning I737F glass substrates using ion-cutting techniques. Because the ion-cutting technique requires ion implantation through the film material, the electrical properties of the exfoliated film have to be examined to understand the behavior as it goes through temperature cycling inherent in the TFT fabrication process. After the film exfoliation, Hall effect, hot probe and four point probe measurements are used along with layer by layer etching to get a picture of the carrier depth distribution. The electrical properties of mechanically exfoliated and thermally exfoliated films are compared and discussed in the context of using these for MOSFETs. Finally, p-MOSFETs are fabricated and the transistor parameters such as leakage current, subthreshold slope, on/off current ratio and mobility compare and contrasted with MOSFETs made from bulk silicon. The mechanically exfoliated films show superior performance with respect to the p-MOSFET off-state, drain to source leakage current compared to the thermally exfoliated films. This difference is attributed to the lower temperature the mechanically exfoliated film is subjected to even before film delamination. The temperature difference of the exfoliation temperatures is responsible for a higher density of oxide precipitates in the thermally exfoliated film which leads to higher leakage currents. |
