| Next generation of high performance nano-optoelectronic integrated circuits will require an integral combination of highly efficient all-optical nanophotonic devices and electrically-pumped nanophotonic devices, which will enable the chip to process optical information all optically with ultrafast speed and electro-optically to interface with the electronic control plane. The realizations of such nano-OEIC still face various challenges, including: (1) the lack of integratable ultrafast all-optical devices; (2) The lack of efficient way to couple light from optical fiber into such nano-OEIC; (3) The lack of microlaser design that can be easily integrated to provide useful optical power; (4) The lack of sophisticated simulator for semiconductor nano-optoelectronic devices. This dissertation explores solutions to these challenges.; Firstly, current all-optical devices are often large in size and high in operating powers, making them unsuitable for integration. We propose a novel way of using gain and absorption manipulation of optical interference (GAMOI) to realize integratable low-power all-optical photonic transistor type devices. Exemplary devices illustrate two complementary device types with high operating speed, micron size, and microwatt switching power. They can act in tandem to provide switching gain, wavelength conversion, pulse regeneration, and logical operations. These devices could have a Transistor Figure of Merits >100,000 times higher than n(2) approaches.; Secondly, we proposed a solution for light coupling between nanophotonic waveguide to optical fiber: a super-high numerical aperture gradient index (Super-GRIN) micro lens made from multiple nanolayers of two or more materials with large refractive index contrast. Super-GRIN lens with NA>1.5 and length<20micron was realized with thin-film deposition technique.; Thirdly, we show the first semiconductor laser using novel micro-loop mirror as end reflector to achieve ultra-compact laser size, which leads to higher output power and ease of integration with nanophotonic waveguides. We present the simulation and fabrication result for this microlaser with cavity length as small as 25micron with low lasing threshold of ∼0.4 mA.; Fourthly, we introduce the first computational model of solid-state, molecular, atomic media for Finite Difference Time Domain simulation based on multi-level multi-electron system governed by Pauli Exclusion and Fermi-Dirac thermalization. We illustrated the advantages of the model for simulating semiconductor nano-optoelectronic devices. |
