Indium nitride growth by metal-organic vapor phase epitaxy | Posted on:2007-05-16 | Degree:Ph.D | Type:Dissertation | University:University of Florida | Candidate:Kim, Taewoong | Full Text:PDF | GTID:1448390005960599 | Subject:Engineering | Abstract/Summary: | | InN and In-rich compositions of InxGa1-xXN, have potential for a variety of device applications including solar cells. This work addresses the growth of high quality InN by metalorganic vapor phase epitaxy. To better understand the material a thermodynamic assessment of the In-N-C-H system was performed to yield the In-N P-T diagram. In addition, the InN critical thickness was calculated for several candidate substrates to guide substrate selection. Furthermore, computational fluid dynamics was used to design an improved reactor. A vertical NH3 tube design produced the lowest reported O-2theta rocking curve FWHM value of (574 arcsec) for InN grown on GaN/A12O3 (0001). The film surface was also mirror-like as judged by AFM (RMS roughness = 4.2 nm). The PL peak energy of 0.82 eV was obtained for InN grown on Si, consistent with recent reports of a considerably lower of bandgap energy. | Keywords/Search Tags: | Inn | | Related items |
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