| Isoelectronic surfactants Sb, Bi, and N, have proven to increase the doping efficiency of Zn while concurrently reducing the unintentional impurities C, Si, and S in GaP. Additionally, surfactant Sb and N have demonstrated that altering the incorporation efficiency in GaP is also possible with a surfactant surface coverage of less than one. Halide surfactants Br and Cl were shown to systematically destroy ordering in GaInP. Furthermore, a distinct correlation between increasing surfactant Br or Cl in the vapor and surface roughness was evident.; This work is presented in three main sections. First, surfactants Sb and Bi, from the pyrolysis of TMSb and TMBi, were examined to determine the effect on Zn doping in GaP. The data demonstrate that the incorporation of Zn can be increased by an order of magnitude in GaP to a value of approximately 1020 cm-3, the highest value reported to date. Additionally, these same surfactants lead to significant decreases in carbon contamination during growth. At high growth temperatures, the reduction can be as large as 100 x in GaP. Second, the role of steps versus the singular surface between steps was studied by using a surfactant fractional surface coverage of less than one. When surfactant Sb was used, the Zn concentration was increased and C was reduced. However, there was no discernable change in incorporation efficiency over the entire range of surfactant Sb studied. Interestingly, surfactant N showed a linear increase in the Zn doping the with amount of surfactant present during growth resulting in an increase of 2 x at the highest flow rate used. Third, halide surfactants Br and Cl, carbon-tetrabromide and carbon-tetrachloride, were studied for their effects on ordering in GaInP. Bromine systematically decreased the amount of CuPt ordering observed by photoluminescence and transmission electron microscopy. Both surfactants Br and Cl were shown to significantly increase the surface roughness, which is postulated to be the origin of the reduction in ordering. |
