Electronic Transport And Device Of Low Dimensional Semiconductor Based Electric Double Layer Transistor

Low-dimensional materials have abundant physical properties,that can apply to many applications.Exploring the low-dimensional electronics is a key research branch in material science,condensed matter physics and micro-electronics in the further.The easiest and most efficient way to manipulate electronics is field-effect transistor,comparing to the traditional metal-oxide-semiconductor field-effect transistor(MOSFET),ionic liquid electrical double layer transistor(EDLT)has a larger modulation capability.EDLT can induce many emergent phenomena that can't be realized in traditional MOSFET.In this work,we apply EDLT configuration to manipulate physical properties of several low-dimensional materials,the work is derived into the following 3 parts.1.We use molecular beam epitaxy to grow high quality ZnO thin film and use micro-nano processing technology to fabricate ZnO EDLT,by applying electric-field to control its electron transport and photoluminescence.With the increasing of carrier density induced by electrostatic effect,we have observed a gate-induced insulator-metal transition with temperature dependence of resistivity.Due to high density carrier accumulation,we have shown the ability to inversion change MR in ZnO by ionic liquid gating.The evolution of photoluminescence under gate voltage was also consistent with the MIT.Our in-situ gate-controlled photoluminescence,insulator-metal transition,as well as conversion of magnetoresistance opens up opportunities in searching for quantum materials and photoelectric devices.2.We use molecular beam epitaxy to grow a high mobility two-dimensional electron gas(2DEG)in PbTe/CdTe heterostructure.Combined with micro-structure characterization,we confirm the mechanism of 2DEG formation.we demonstrate the manipulation of electrical transport properties of this 2DEG with extremely high mobility and unique electron structure by ionic liquid-gating.The extreme capacitance of carrier modulation enables to tune the band structure.With a change of the gate voltage,the Fermi level moves to the conduction band and cross the Dirac Point,leading to the change of quantum oscillation.This powerful method provides a new way to manipulate high-mobility-electron-transistor(HMET).3.We use chemical vapor deposition to grow monolayer/bilayer MoS2 on Si02/Si substrate.By applying micro-nano processing technology,we fabricate back-gate MoS2 MOSFET,the electrical properties can not reach the theoretical ones due to the presence of defects.We also use chemical vapor transportation to grow high quality Bi2Se3 single crystal.At low temperature we observe a clear quantum oscillation with a low frequency and small effective mass,however,we didn't observe weak anti-localization after exfoliating due to a relative thicker thickness.Both Bi2Te3 and Bi2Se3 are n-type conductivity,while Sb2Te3 is p-type.Doping Bi element into Sb2Te3 can realize n-type doping,changing its electrical structure and tuning the Fermi level to Dirac point.The magnetotransport result shows a superconductivity.(BixSb1-x)2Te3 is a potential topological superconductor.We also synthesis type-? semimetal PdTe and find superconductivity.Then we fabricate device with these 2d topological material,hoping to use ionic liquid to gate superconductivity in the further work.