| In some complex working conditions and harsh service environments,the requirements for film quality are also increasing.In the preparation of films,the behavior and evolution of plasma are the core factors.Cathodic arc technology has many advantages,such as high ionization degree,high ion energy,rapid deposition speed as well as good adhesion strength between the coating and substrate,etc.It is widely used in the processing and manufacturing of tools and dies.Although the ionization degree of cathodic arc technology is high,it refers to the metal.How to improve the ionization degree of the reaction gas and further improve the plasma density in the vacuum chamber is also an urgent problem to be solved.In this paper,the technology of electric-field enhanced cathode arc is proposed.The enhanced discharge of additional anode is used to improve the ionization rate of reaction gas in the system and the plasma density in the vacuum chamber.The electric-field enhanced discharge effect and optical spectral characteristics are also studied.Ti Si CN and TiAlCrSiCN films were prepared by this method,and the structures and properties were systematically studied.On the basis,the Ti Si CN/Al Cr Si CN film with the thickness of 56.5 ?m were prepared.In the atmosphere of argon,nitrogen and the mixed nitrogen with tetramethylsilane,the results of substrate current show that electric-field enhanced discharge can significantly increase the plasma density compared with the absence of additional anode and the substrate current is increased obviously.With the increase of working pressure or flow rate of gas,the discharge effect decreases gradually,and the substrate current decreases.With the increase of coil current,the substrate current increases first and then decreases.The results of plasma emission spectroscopy show that in the atmosphere of argon,nitrogen and the mixed nitrogen with tetramethylsilane,the ionization degree of metal particles is not significantly affected by the current of the additional anode by comparing the optical spectra results of cathodic arc with or without additional anode enhanced discharge,but the ionization degree of gas is significantly increased.Compared to that without additional anode enhanced discharge,the maximum ionization degree of Ar,N,Si and C is increased by 70.7%,75.3%,97.6% and 202.1%,respectively.Also,the electron temperature increases gradually.The ionization degree of particles decreased with the increase of working pressure or gas flow rate.Ti Si CN film is prepared by electric-field enhanced cathodic arc method,and the morphology,structure and properties are systematically studied.The results show that the appropriate additional anode current can reduce the number and size of particles on the surface of film.When the anode current is 30 A,the density of particles decreases by 35.2% and the grain size is the minimum?18.8 nm?.When the bias voltage is 30 V,50V,70 V and 90 V,the content of Si in the film prepared with the anode current of 35 A and increases by 31.2%,36.9%,38.9% and 30.1% compared to that without additional anode,respectively.The columnar structure of the films prepared by additional anode enhanced cathodic arc is not obvious.The penetrating columnar crystal is interrupted.The film grows uniformly,continuously,and the density increases.Also,the Ebi gradually increases.When the anode current is 40 A,the Ebi is increased by 31.6%,and the content of carbon phase,silicon phase and nitrogen phase is increased by 67.2%,48.9% and 21.2% respectively.With constant anode current and lower bias voltage,the Ebi shows a downward trend,and the compactness of film also decreases.With the increase of anode current,the ?h decreases first and then increases,while the value of H/E* and H3/E*2 increases first and then decreases.When the anode current is 30 A,the hardness of the film is higher and the indentation toughness is the highest.At the same time,the film exhibits excellent high-temperature oxidation resistance and corrosion resistance.TiAlCrSiCN film is prepared by electric-field enhanced cathodic arc method,and the morphology,structure and properties are systematically studied.The results show that when the anode current is 30 A,the density of particle on the surface of film is the lowest?2.12 mm-2×106?,and the grain size is the minimum?13.5 nm?.When the bias voltage is 40 V,70V,100 V and 150 V,the content of Si in the film prepared with the anode current of 35 A increases by 45.2%,50.4%,52.5% and 49.1% compared to that without additional anode,respectively.With the increase of anode current,the density of film and the Ebi increases gradually.Compared to that without additional anode,the Ebi is increased by 33.1% at the anode current of 40 A.The content of carbon phase,silicon phase and nitrogen phase is increased by 79.5%,54.6% and 18.1% respectively.When the anode current is constant and the bias voltage decreases,the Ebi and compactness of film decrease.The hardness of the film can be significantly improved by the enhanced discharge of anode compared to that without additional anode.When the anode current is 30 A,the ?h is the minimum?0.463?,while the H/E* and H3/E*2 are the maximum.Besides,the crack length of the films is the shortest,the toughness and crack resistance are the most optimal.The wear resistance,high temperature oxidation resistance and corrosion resistance of the films are also significantly improved. |
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