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Telecom-wavelength-transparent Ge-Sb-Se-Te Nonvolatile Optical Phase Change Materials And Devices

Posted on:2019-05-31Degree:DoctorType:Dissertation
Country:ChinaCandidate:J Y LiFull Text:PDF
GTID:1361330566977232Subject:Optical Engineering
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Phase change materials(PCMs)could achieve ultra-fast reversible phase change and exhibit huge electrical/optical contrast via the change of atomic arrangement between different phases.Numerous studies have been done on properties,structures and applications of phase change materials in academia and industry worldwide.Chalcogenide compounds are commonly used nonvolatile phase change materials with the self-hold nonvolatile ordered/unordered atomic arrangement.They are of great importancea due to their unique role in the information storage including optical disks and phase change memories.The development of the photonic integration technology gave birth to the concepts of photonic computer and optical logic.As the fundamental components,the integrated optical switches/memories gradually began to be studied.However,when applying the PCMs into integrated optical devices,researchers found that all of them were quite lossy at the most important 1550 nm telecom wavelength.The optical absorption induced by PCMs is the major obstacle when leveraging the optical contrast between different phases of PCMs in integrated optical devices,thus impairs the performance of the optical chips.The purpose of this dissertation is to put forward an optical phase change material(O-PCM)which is transparent at 1550 nm telecom wavelength and meanwhile owns large optical contrast between phases.Ge2Sb2Te5 is the most widely used and studied nonvolatile PCM which had been commercialized already.The ultrafast phase transition,large optical contrast and good stability of Ge2Sb2Te5 are satisfying.Therefore,to inherit these good properties,we started from Ge2Sb2Te5 and stepped into Ge-Sb-Se-Te material system.The optical properties and applications of Ge-Sb-Se-Te were studied.The main research contents are as follows:1)The Ge2Sb2SexTe(5-x)(x=0,1,2,3,4,5)thin films were deposited,and their crystallization behavior and optical properties were studied.The phase evolution of Ge2Sb2SexTe(5-x)with the temperature were characterized with X-ray diffraction,and the influence of Se-Te substitution on the crystallization temperature and thermal stability were investigated.The optical constants(refractive index and extinction coefficient)of amorphous/crystalline Ge2Sb2SexTe(5-x)thin films were measured,modeled and fitted using ellipsometry,and the role Se played in the optical constants and optical contrast was analyzed.2)Making a balance among different characteristics of Ge2Sb2SexTe(5-x)materials,Ge2Sb2Se4Te1 became a candidate of the new O-PCM we were looking for.The selected area electron diffraction result suggests that Ge2Sb2Se4Te1 exhibits a hexagonal lattice structure,and is believed to be related to its special phase change properties.3)Using cut-back method in integrated waveguides,the upper limit of the material loss of Ge2Sb2Se4Te1 was further determined to be 705 dB/cm(extinction coefficient<0.002)at 1550 nm wavelength.Ge2Sb2Se4Te1 was put forward as the first 1550 nm wavelength-transparent O-PCM with a figure-of-merit more than 22 times higher than Ge2Sb2Te5.4)In order to demonstrate the applications of Ge2Sb2Se4Te1 in integrated optical devices,the Ge2Sb2Se4Te1 based SiN micro-ring resonator optical switch was fabricated,achieving an on/off contrast of 41 dB and an insertion loss of 0.15 dB.Both of the performances represent significant improvements compared to state-of-the-art Ge2Sb2Te5-based devices.The credit was given to the combination of ultra-low loss and large-enough optical contrast of Ge2Sb2Se4Te1.5)The potential unconventional application of O-PCM was explored.To make advantage of the mixing state between the fully amorphous state and the crystalline one,and to leverage the broadband operation of chalcogenide-compound O-PCMs,phase change tunable filters for wavelength multiplexing multispectral infrared imaging were designed.The principle of the high-throughput and non-scanning infrared imaging system was introduced.Ge2Sb2Se4Te1 was employed in the design and simulation of the tunable broadband filter in the near-infrared wavelength.The filter transmittance spectra were calculated by transfer-matrix-method and optimized using singular value decomposition.The signal reconstruction of the system accompanied by the random detector noise or the state noise was analyzed.
Keywords/Search Tags:Optical phase change material, telecom-wavelength transparency, non-volatile integrated optical switch, filter for multispectral imaging, Ge2Sb2Se4Te1
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