Research On The Novel Surface Emitting Light Sources And Integrated Technologies For On-chip Optical Interconnection

With the coming of the "Internet Plus" time and the rise of new information industries such as the Internet of Things,big data,cloud computing,and artificial intelligence,the high-speed transmission,processing,and storage of information has become particularly important.The demands for high-speed,broader bandwidth,little time delay and low cost network become stronger.However,the traditional electrical interconnection method,because of its insurmountable "electronic bottleneck",limits the further increase in speed and bandwidth.In recent years,successful development and industrialization of various active and passive optical functional devices,information exchange methods led by optical interconnection become more widespread.The optical interconnection networks can settle the limitations of the electrical interconnection networks.The researches on the optical interconnection networks become more and more important.The integrated optoelectronic technology established on the silicon-based platform is expected to become the most promising technology for optical integration and photoelectron hybrid integration because of its excellent linear and nonlinear characteristics and compatibility with the current mature CMOS process in the field of microelectronics semiconductors.While silicon is a kind of indirect bandgap material,the power conversion efficiency of the silicon-based laser sources is relatively lower,about 1%.The main limitation of the silicon-based integrated optoelectronic circuits is high efficiency laser source.In order to solve the above problems,in this thesis,we have accomplished researches on the light sources suitable for the on-chip optical interconnections.Besides,we also accomplished some researches on the hybrid integration technologies.The design,working principles,simulation model and fabrication processes of the semiconductor laser are presented.We have proposed a high-order grating surface emitting laser which has many advantages,such as low cost,easier in fabrication processes and is very suitable for integrated circuits.We gave the design of the hybrid integration circuts based on the laser source we proposed.The main contents and innovations are as follows:(1)A high-order grating coupled surface emitting laser is proposed.And the surface emission properties of this laser are analysised based on the famous Green Function analysis.(2)The working principles of the semicondutor laser are analysed.And an improved time-domain travelling wave model has been built for the high-order grating surface emitting laser modelling.The time-domain travelling wave model can be numerically solved by using the split-step method.Based on this simulation model,we optimized the structure parameters of the high-order grating surface emitting laser.The fabrication processes of this laser are investigated.(3)A novel structure of the hybrid integrated optoelectronic circuits based on the surface emitting laser structure we proposed are given.We also optimized the hyrid integration structure parameters.