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Research On The Metal-insulator Transition Of 4d/5d Transition Metal Oxides

Posted on:2019-08-16Degree:DoctorType:Dissertation
Country:ChinaCandidate:Y Y JiaoFull Text:PDF
GTID:1360330566460054Subject:Condensed matter physics
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Metal-insulator transition?MIT?is one of the most important manifiestation of quantum phenomena in strongly correlated electron systems.The Mott insulating state frequently observed in the 3d transition-metal oxides can be convereted to metallic via doping charge carriers or applying chemical/physical pressure.In the transition region,the 3d electrons acquire both localized and itinerant characters,and the strong interplay of charge,spin,orbital,and lattice degrees of freedom can induce many intriguing quantum states of matter,which are prone to external stimuli and can give rise to some exotic phenomena such as high-Tc superconductivity or colossal magnetoresistance.Therefore,MIT and its manipulation ha ve attracted considerable interest in the strongly correlated electron systems.In comparison with the well-studied 3d transition-metal oxides,the electronic states of 4d/5d conterparts are closer to the localized-to-itinerant transition due to the spatially more extended 4d and 5d orbitals.In addition,the enhanced spin-orbit interaction,comparable with the onsite Coulomb interaction U and electronic bandwidth W,gives rise to many novel phenomena that are the subject of extensive investigations in recent years.In this diseration,we investigated the MIT in several4d/5d transition-metal oxides with an aim to uncover the mechanism and associated unusual phenomena.The main results include:1.The cubic pyrochlore Cd2Ru2O7 develops a peculiar metallic state below the antiferromagnetic?AF?order around TN=100 K.We have studied the effects of hydrostatic pressure and the isovalent chemical substitutions on the electrical transport properties of Cd2Ru2O7 synthesized under high pressure.We found that the metallic state below TN is very fragile and can be immediately convereted to an insulating state by either application of hydrostatic pressure1 GPa or replacing10%Ca2+or Pb2+for Cd2+.In comparison with other Ru pyrochlores,we proposed that Ru5+-4d3 electrons are located near the crossover from localized to itinerant state and thoese external stimuli can enhance the localized character by strengthening the Cd-O valvency under pressure or introducing chemical disorders via doping.2.Another cubic pyrochlore Tl2 Ru2O7 exhibits a sharp MIT around 120 K accompanied with a structural transition.Previous studies have shown that the development of orbital ordering below the structural transition might facilitate the formation of quasi-1D S=1 Haldane chain with a spin gap.We have synthesized the Tl2Ru2O7 pyrochlore under high pressure and invistiaged the effect of hydrostatic pressure and the isovalent chemical substitution.We found that the application of pressure first reduces slightly the MIT and then shifts it to higher temperatures gradaully,with the MIT less pronounaced.It is likely that the pressure can stabilize the orbital order and enlarge the spin gap of Q1D Haldane chains.On the other hand,substitutions of Bi3+for Tl3+can suppress the MIT and stbalize a metallic ground state gradually,presemubaly due to the obital hybridization between the Bi3+-6p orbital with the Ru4+-t2g orbitals as well as the introduction of lone pair Bi3+-6s2 electrons.3.We also studided the doping-induced MIT in the series of cubic pyrochlores Y2-x-x Rx Ru2O7?R=Bi or Pb?synthesized at ambient pressure.In both cases,the AF insulating state of Y2Ru2O7 can be continuous transformed to the paramagnetic state upon doping.For the isovalent Bi3+doping,the introduction of lone-pair electrons and the orbital hybridizations are important for the MIT,while the hole doping in the Pb2+-doped samples should also contribute to the MIT.4.We also synthesized cation-ordered inverse trirutile Cr2ReO6 and monoclinic birutile CrReO4 under moderate high-pressure and high-temperaure conditions,and performed detailed characterizations on their structural,transport,and magnetic properties.A second-order AF transition is found to take place at TN=67 K for Cr2ReO6 and TN=98 K for CrReO4,respectively.Their magnetic structures were determined from the analysis of the NPD patterns.Both compounds are confirmed to display a semiconducting behavior following the Mott's VRH conduction mechanism.A weak anomaly can be discerned around TN from the temperature derivative of resistivity for both compounds,signaling a coupling between spin and charge degrees of freedom for these 3d-5d coupled electron systems.5.CrSb2 is a narrow-band semiconductor.We obtained its high-pressure form and investigated its physical properties in detail.The high-temperature phase of CrSb2 is metallic,and undergoes two successive magnetic transition upon cooling,i.e.a ferromagnetic?FM?transition at160 K and an AF-like transition at 86 K.The AF transiton can be suppressed gradually by applying external magneic fields at ambient pressure,resulting in a ferromagnetic metal ground state above 3 T.O n the other hand,the AF transition can be enhanced quickly by pressure and meet with FM transition,forming a new AF state,which can be eventually suppressed by pressure of9 GPa,forming an AF quantum critical point.
Keywords/Search Tags:4d/5d transition metal oxide, Metal-insulator transition, High-temperature and high-pressure synthesis, itinerant ferromagnet
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