The Research On The Mechanism And Preparation Of Artificial Micro-nanostructure Photodetector

With the development and progress of nanoscience and micro-nano processing technologies,the research on artificial micro-nanostructure photodetector is in a period of vigorous development.Currently,the international research of electronic and optoelectronic devices based on nanomaterial is progressing rapidly.Especially in the field of photodetection,the artificial micro-nanostructure photodetector has surpassed the traditional material detector in certain performance indexes.In particular,the artificial micro-nanostructure photodetectors exhibit excellent photoelectric performance at room temperature,which will be one of the most competitive technologies for next generation high performance,uncooled photodetectors.Here,we focus on solving the mainly three problems that plaguing artificial micro-nanostructure photodetectors.In the first,large-area epitaxial two-dimensional heterostructure materials are used to realize large format artificial micro-nanostructure photodetector.Secondly,the high-performance artificial micro-nanostructure photodetector is realized by local electric field drive technology.At last,solving the problems of photoelectrical characterization of micro-nanostructure devices by using high-spatial resolution microanalysis photoelectric characterization technologies.The specific research contents are as follows:1.Design and construction of microanalysis photoelectric characterization system.Compared with the traditional photodetector based on thin-film,the novel nanomaterials and low-dimensional materials have large specific surface area and rich trap states,leading to the difficult fabrication of the new materials.Additionally,the traditional thin-film detector is moving forward in the direction of ultra-small pixel and super-integration,and the existing characterization techniques or equipment can not meet the accuracy requirements.Based on the demand of artificial micro-nanostructure photodetector characterization,we designed a series of microanalysis photoelectric characterization system.It solves the requirement of microanalysis photoelectric characterization of micro-nanostructure photodetector and the high-resolution detection requirements of traditional thin-film photodetectors,providing a strong technical support for further research.2.The research on the preparation and mechanism of wafer-scale Van der Waals two-dimensional heterojunction photodetector.In order to achieve wafer-scale of high-performance two-dimensional heterojunction photodetector,the Van der Waals heterojunction with high crystallinity,layer-by-layer growth and evenness was prepared by molecular beam epitaxy(MBE).By constructing a two-dimensional heterojunction structure to introduce a strong built-in electric field,which can efficiency separate the photo-generated carriers.In addition,the formation of built-in electric field suppress the dark current and noise level of the device,thereby greatly improving the performance of the photodetector.3.High-performance artificial micro-nanostructure photodetector driven by local electric field.The carrier transport properties of nanomaterials can be driven by the ferroelectric local field and space charge local field,leading to the realization of hetero-or PN junction,and band manipulation of novel low-dimensional semiconductor materials.4.The research on the mechanism of the micro-junction of traditional planar HgCdTe infrared detector.The ICP-induced mesa damage in the HgCdTe epitaxial layer was evaluated by high-spatial resolution laser induced photocurrent(LBIC)analysis.This in-situ and non-destructive of microanalysis optoelectronic characterization technique can accurately and quantitatively analyze the damage distribution of the micro mesa on the traditional thin-film device,which is the necessary condition for the traditional photodetector to realize the formation of extraordinarily massive arrays.