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Multifunctional Memory Based On Metal-semiconductor Interfacial Optoelectronic Effect

Posted on:2017-04-15Degree:DoctorType:Dissertation
Country:ChinaCandidate:H W TanFull Text:PDF
GTID:1318330512473865Subject:Materials Physics and Chemistry
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With the increase of massive data nowadays,the logic and memory devices need much more advanced technology to improve their performances for efficient information processing and storage.As one of the most promising candidate for next generation technology,optical-electrical interconnection chips use photons and electrons to communicate and process data and will enhance computing efficiency.However,the key optical compotent,such as the photodetector,has single function,which cause that many different compoments should be integrated together to perform different functions.Therefore,the circuits will be more complicated.Multifunctional optoelectronic devices,wherein the states are modulated with optical and electrical hybrid methods,integrate at least two functions such as detecting,demodulating,even arithmetic,logic,memory in a single cell and will implement parallel algorithms on such devices.Therefore,developing novel multifunctional optoelectronic materials,physics and devices will be much more essential for post-Moore era.Focusing on the optical and electrical hybrid control of states for multifunctional optoelectronic materials,physics and devices,we performed some works as follows:1.By controlling the resistance states of ITO/CeO2-x/AlOy/Al structure with optical methods,we studied the relationships between persistent photoconductance and light intensity,wavelength and pulse number experimentally and theoretically.Based on these optoelectronic properties,we proposed and demonstrated an optoelectronic memory with integrated photodetecting,demodulating and arithmetic functions in a single cell,which will provide guidelines for multifunctional optoelectronic devices.2.With the optical and electrical hybrid control of resistance states of ITO/CeO2-x/AlOy/Al structure,we studied the optically-gated memristor behaviors,based on which we proposed an optoelectronic nonvolatile reconfigurable logic device.We name it 'Memlogic',short for memory-logic.Functioning as both reconfigurable logic gates and memory,the memlogic device will have the potential for not only building multifunctional optoelectronics but also simplifying the programmable logic circuits.3.Based on the above two works,we studied the combination of resistive switching and persistent phtotconductance effects in typical optoelectronic ZnO/NSTO Schottky junction to construct an optoelectronic artificial synapse,which is capable of simulating basic synaptic behaviors and functions.Then a memlogic function also has been achieved in this optoelectronic artificial synapse.Furthermore,an artificial optoelectronic synapse array has been fabricated to simulate the brain-inspired image memorizing and cognitive computing.These results indicate that the optical and electrical hybrid control of Schottky barrier profile will contribute to integrated multifunctions and optoelectronic artificial synapse.These proof-of-concept multifunctional devices have high potential for integrated photonics,programmable logic devices and optoelectronic neural networks.
Keywords/Search Tags:resistive switching, persistent photoconductivity, multifunctions integration, nonvolatile reconfigurable logic, optoelectronic artificial synapse
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