Preparation Of Molybdenum Disulfide-Graphene Based 2D-Layer Structures And Their Optoelectronic Properties

With the development of nanometer science and technology, layered structure of two-dimensional material such as Graphene (Gr) and transitional metal dichalcogenides (TMDs), have attracted widely attention. However, the low rate of current switching caused by no band gap makes graphene limited in logic electronics applications. Transitional metal dichalcogenides, especially MoS2, as a semiconducting analogue of Gr and unique properties have attracted the attention of the researchers. This paper firstly introduces a overview of MoS2. After the introducing basic properties of MoS2, we study MoS2 and MoS2/rGO nanocomposites by hydrothermal method. Finally it focuses on Au/MoS2 (nanospheres)/Au structure photoelectric properties. Contents is divided into the following several aspects:1?Synthesis MoS2 by hydrothermal method and self-assembled low-dimensional MoS2/rGO composites by sonication-assisted hydrothermal growthThe self-assembled low-dimensional MoS2/rGO composites were synthesized by the one-step hydrothermal procedure in liquid phase with Na2MoO4·2H2O and CH3CSNH2 using as precursors. The results indicate that rGO, derived from the deoxygenation of GO provides an excellent template for the growth of low-dimensional (1-2 layer) MoS2 in the form of 2D crystal or 3D nanosphere. The mechanism of self-assembled MoS2/rGO was proposed. The quantum confinement of electrons in a molybdenum disulfide or graphene controlled by the degree of reduction of graphene oxide gives great features to apply in advanced photonics and optoelectronics.2?MoS2 memristor with photoresistive switchingMoS2 nanosphere memristor with lateral gold electrodes was found to show a photoresistive switching. The novel device can be controlled by a charge polarization of the nanospheres and switched the resistance by an electric field in the dark and under white light illumination. The charge polarization allows to change the switching voltage of the photomemristor, providing the multi-level operation. The nanosphere structure polarized at voltage of 6V shows the sharp resistive switching under white light excitation from high resistance state (HRSL6) to low resistance state (LRSL6) with ON/OFF ratio of 10. Analysis of the electrical conductivity in the resistive states indicates that charging and polarization the nanospheres modulated by light could form and interrupt highly conductive filaments to switch the photoresistance. MoS2 photomemristor shows great potential as a new multifunctional device, obtained by simple solution-processing techniques.