InP-based Dilute Magnetic Semiconductor Prepared By Fe~+Ion Implantation

Ion implantation as a new type of material modification method is widely used in today’s industrial production and scientific research. According to different purposes, as the key point of ion implantation, different kinds of ion source have been made to satisfied the requirements of the experiments. Author have re-designed and improved Penning ion source and hallow cathode ion course to reach my purpose of metal ion implantation.Dilute magnetic semiconductor as a kind of new material which combine the magnetic and semiconductor properties together have attracted many researchers’ attention in recent years, on the basis of existing research, the writer choose iron as the doping element into the semiconductor substrate, intention to obtain magnetic semiconductors, and comprehensive study on the aspects of the physical properties, try to make a reasonable explanation of magnetic mechanism.This paper mainly divided into the following two parts:(1)Which is based on ion implanter machine and the accelerator of ion implantation technology, focuses on the working principle of various ion source and presents new design of two kinds of ion source.(2) Used the new kind of ion source, achieve iron ion implantation into indium phosphide and get InP based dilute magnetic semiconductors, comprehensive research of its optical, electronic, magnetic and structure properties.