Basic Research On Preparation And Properties Of One-dimensional SiC Nanomaterials

One-dimensional (1D) nanostructures have become the focus of intensive research owing to their novel physical, chemical, and biological properties as well as the potential applications in nanodevices. It was of not only their importance in understanding fundamental physical phenomenon, e.g. electron transportation, but also the promising applications such as interconnects and functional building blocks for novel electrical, optical and magnetic nanodevices. Moreover, large-scale, cost-effective, simple and practical synthesis and assembly of 1D nanomaterials is of importance for the fundamental research and application. Among the semiconductor materials which are suitable for high frequency, high temperature, high power and radio-resistance applications, silicon carbide (SiC) holds the most promising because of its wide energy bandgap, high breakout field, high thermal conductivity and high drift velocity. The combination of these properties shows promise for next generation microelectronic devices and ICs fabricated in SiC. The study of SiC material is of great importance to future nanoscale electronic devices as well as fundamental research. At present, the research on SiC nanowire is just in a tentative stage, and has been focused on two aspects: a simple and easy preparation of SiC nanowires, and the testing of SiC nanowires properties of optical, filed emission and so on. However, these products are available at the cost of either high-purity or expensive CNT or the hazardous and easily explosive silicon (carbon) precursor of SiH₄ or CH₄. In addition, the synthesized materials were low yield and purity and time-consuming. Thus, large-scale synthesis of β-SiC nanowires still remain a challenge to be consider for above mentioned disadvantage. Hence, the simple, large quantity and low cost...