| With the rapid development of the integrated circuits, the performance of integrated circuits are gradually being constrained by the limitation of metal-based electrical interconnects. The on-chip photonics network offers an opportunity to address the problem because of its high bandwidth, low power and, short latency. The silicon photonics technology is considered as a promising platform for the on-chip photonics networks since it is compatible with the CMOS process and capable of dense integration. In the recent decade, the silicon photonics has attracted much more attention, witnessed by the demonstration of high-performance silicon photonics devices. The key of the implement of photonics network-on-chip is to fabricate the traditional disctete optical devices on a one chip. As we known, the laser, photodector, modulator, switch are the basic elements in the the on-chip photonics networks. The purpose of the our work is to design and fabricat the high-performance switch element and multifunction photonic integrated devices based on combination of switch element. The contributions and innovations of our work are listed as follows:1.Designed and demonstrated a series of 2 x 2 optical switch. (1)We demonstrate a basis 2×2 switch element, which is fabricated by the 0.8-μm commercial CMOS techonolgy. (2) We demonstrated a 2 x 2 optical switch, which is integrated with a functional module:variable optical attenuator and optical monitor. In the VOA operation mode, the lowest crosstalk and max power consumption of the switch are about-24.5 dB and 30.4 mw. In the optical monitor operation mode, the optical power can be monitored. (3) Designed a 2×2 Mach-Zehnder electro-optical switch with a ultr-low crosstalk. The crosstalk of the switch is as low as -40dB in theory.2. We present a 1×3 Mach-Zehnder based electro-optic switch in silicon, which employs only two p-i-n phase shifters and possess a simple control manner. Average crosstalk level and extinction ratio are -21.9 dB and 22.9 dB respectively at 1550-nm wavelength. The influences of free carrier absorption (FCA) and fabrication error on the crosstalk of the switch are analyzed according to the theory and experimental results.3. We report the experimental demonstration of a 3×3 thermo-optical switch in silicon-on-insulator. By controlling a single combined phase shifter, light from any input waveguide can be directed to any output waveguide, showing a simple control manner and highly integrated structure as compared to the conventional multi-way optical switches. Furthermore, the proposed optical switch can expanded to be 1×N and N×N optical switch without extra phase shifter. The switch is fabricated by CMOS technology. In experiment, full 3×3 switching functionality is demonstrated at wavelength of 1.55μm, with an average crosstalk of -11.1 dB and power consumption of 97.5mw.4. We demonstrated a four-port electro-optical Mach-Zehnder optical switch in silicon-on-insulator for on-chip photonic network. It employs four 1×3 switching elements and it has two operation modes:router mode and broadcast mode. The optical path can be built between any two ports in the router mode. In the broadcast mode, the light can be broadcast to other three ports and each port has the authority to receive or reject the optical signal. The switch is fabricated by the CMOS technology. The switching functionality is demonstrated, with crosstalk levels lower than -9dB, and nanoseconds response (5.5 ns).5. We design a cross-slot waveguide filled with electro-optical polymer is presented. The characteristics of polarization-insensitive are analyzed by utilizing FD method. By balancing the electric field in the cross-slot, it can achieve polarization-independent modulation.
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