Semiconductor Midfield Domain Theoretical Model Of Chaotic Motion

We discuss chaotic transport phenomena in semiconductors and "quantum chaos."A model is proposed describing the Gunn effect in chap. three. It is based on field domain dynamics and thesimplifying assumption of a phenomenological V(E) characteristic analytical expression. When the dc Mas is in the region of negative differential mobility, the numerical result of the model exhibites spontaneous oscillation. That is Gunn oscillation. And adding ac bias, a novel devil's staircase and Faray sequences of frequency-locking are produced by interaction between the internally spon-taneous oscillation and the external ac signal. At higher ac amplitudes, quasiperiodicity, period doubling and chaos can be seen.In chap. four, we investigate the characteristics of low-frequency field domain oscillation in P-Ge. The negative differential conductivity (NDC) of the dc I-V characteristics are well explained in terms of a simple rate equation model which describing free-carrier dynamics in P-Ge due to capture by impurity atoms and impact ionization. And it is argued, the spontanous current oscillations are due to moving field domains which arise from a negative differential rate of purity impact ionization. The volocity expression of moving domains is ob-...