G <sub> A </ Sub> The P <sub> 1-x </ Sub> N-<sub> X </ Sub> And G <sub> A </ Sub> A <sub> S1 Is-x </ Sub Basic Research, On N-<sub> X </ Sub> Alloy Systems | | Posted on:1995-07-19 | Degree:Doctor | Type:Dissertation | | Country:China | Candidate:X S Wu | Full Text:PDF | | GTID:1110360185465217 | Subject:Condensed matter physics | | Abstract/Summary: |  PDF Full Text Request | | GaN is a semiconducting compound with a direct band gap of about 3.39eV It can be an efficient light emitter over a wide spectral range including the visible and has been made to lase in the ultraviolet. However, this usefulness of GaN for optoelectronic devices seens to be limited by the fact that the defficulty in obtaining p-type material is to grow crystals by admixing GaP (or GaAa) to GaN. As will known, GaP (or GaAa) with n- or p-type conductivity can be easily obtained by suitable doping. Thus, it might be possible to get n- and p-type GaP1-xNx (or GaAa1-xNx) crystals above some critical P content of the alloy system. The some idea has been reported for the GaAs1-xPx.The existing probability for these two alloy compounds GaAs1-xNx and GaP1-xNx have been proved theoritically and experimentally. The solubility for GaN in GaAa or GaP and GaAa or GaP in GaN were obtained by the mechanical method of chemical interaction. At room temperature, very small value of solubility of these systems are given, for example, the solubility for GaN in GaP is about 0.005. However, at 1500K, the solubility is reached to 0.36 for GaN in GaP.Three methods are be used to calculate the heat of formation of III — V binary compounds: Pauling empirical method(chemical bond); Phillips-Vechten empirical method (dielectric theory) and the Miedema semi-empirical method. The consistent results in three methods are obtained qualitivily. Toop's model and Miedema method are to be used to calculate the heat of formation of ternary compounds. A projected method is used to obtained the heat of formation of AB1-xGx. The heat of formation (ΔH) is negative for GaAs1-xPx and for GaAs1-xNx compounds in the all range and for GaP1-xgNx compound in the... | | Keywords/Search Tags: | N-<, sub>, | | PDF Full Text Request | Related items |
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