InP-SiO <sub> 2 </ Sub> 3D Photonic Crystals MOCVD Prepared And Characterized

Because photonic cystal can control the flow of photons, it has many applications and has become one of the most important theses of the world. In this paper, researches based on the preparation and characterization of InP-SiO₂ three-dimentional photonic cystal.Firstly, fabrication of SiO₂ colloid photonic crystal through Gravity sedimentation and vertical deposition and studied by SEM, UV-Vis, Then, preparation of the template of SiO₂ Photonic crystal for the infill of InP by vertical deposition. The second is Infilling InP within the interstice of the template by metal-organic chemical vapor deposition ( MOCVD ). The main achievements obtained in this work are as follows :1. Designed the special technology of InP growth on the voids of silica PC template on the basis of consulting a great deal of literature, The results show that the growth technology is the key factor to increasing the filling ratios of InP. on the voids of silica PC template2. Designed the condition experiment of InP nucleation, by analyzing the nucleation condition of InP growth by MOCVD.It is show that the nucleation tempertation and the PH3 flux have effect on InP growth in the interstice of the template, causing the changing of the sample optics properties. The results show that low temperature is benefit to InP nucleation and the filling ratios of InP aggrandize with PH3 flux increasing. A model of InP nucleation is advanced to explain the experiment results.3. studying the effection of the growth cycle to the InP's infilling. The results show that the cycle mode can increasing the infilling ratios of InP efficiently. The infilling ratios of InP is increasing with cycle numbers on the basis of the same TMI's flux, and the shift of the PBG is evidence.4.Based on the experimental results, the growth condition used in this our work for InP growth by LP-MOCVD was optimized. On the basis of optimized MOCVD growth condition,the MOCVD growth of InP was studied and High-quality of InP crystal and higher filling ratios is attained.The filling ratios of InP is about 19.5%,which is largely exceed to the report of the world.5. studied the method to dissolve the silica template, After optimizing the dissolving condition, the silica template can be dissolved completely and acquired the 3D network structure, testing the possibility to acquiring the 3D InP PC.6. Studying the mechanism of the priority of InP growth in the interstices, the factor of affect the priority growth of InP in the interstices include: concave nucleation, low-pressure growth, the same structure of different samples and matched crystal lattice.7. Based on the morphology of the samples,a model of island nucleation is used to explain the experiment phenomena.8. In the end, The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells was studied, The PL intensity of MQW structure obviously changed with Si-doping.