Study On Effect Of HPM Coupling On Complex Metal Cavity

High power microwave pulse effect is one of fundamental issues in the study of high power microwave technology. Based on the three basic elements of the microwave electromagnetic pulse effects:interference sources, coupling channels and target, with considering the two main electromagnetic coupling channel:the cables and the apertures, the equivalent circuit source model was estanblished and the coupling effects of on the target are analyzed with high frequency(GHz).1) Aimed at the structure characteristics of a shielding cavity with a cable, the two-port network theory and the frequency-domain integral equation method of moments were combined to estabilsh the equivalent current source model of the induced current on the cavity and the cable. Within 0.1GHz-7.5GHz frequency range, the validity of the model is introduced to verify the equivalent source model. Furthermore, with taking a four-layer printed circuit board for example, the microwave pulse effects on thecircuit in the cavity are achieved through software simulation.2) Aimed at the structure characteristics of a shielding cavity with apertures, a plane wave and an electric dipole are introduced to delegatethe far-field and near-field interference sources respectively, and the electric field shielding effectiveness at the observation point inside the cavity are analyzed based on the improved TLM method,includingthe far field shielding effectiveness of a rectangular cavity with a convex structure, the near-field shielding effectiveness of a rectangular cavity containing internal baffles, as well as the near-field shielding effectiveness of a cylindrical cavity. The results of the software simulation validated the validity and applicability of the model established in this paper.3) For complex cavities, the plane wave and the Gaussian pulse were taken as the electromagnetic interference sources respectively, and an FM transmitter circuit is used as the target circuit. The electromagnetic sensitive areas of the circuitwere were determined by the EMCSCAN system. Furthermore, a wave chaotic metal cavity was manufactured.The scattering parameters and radiation scattering parameters of the cavity were obtainedby the experiment, and a set of the experimental data processing is designed. Ultimately the induced voltage distribution density function of thetarget point of the target circuit was calculated by the Random Coupling Model.Among these, the method ofthe cavity loss factor determinationand the processing of the experimental data are discussed in detail.