Total Reflection Related XRF Analysis Techniques And Its Application

Grazing Incidence X-Ray Fluorescence (GI-XRF) analysis system and Grazing Exit X-Ray Fluorescence (GE-XRF) analysis system, which are based upon the conventional X-Ray Fluorescence (XRF) and related to the X-Ray Total Reflection phenomenons, have been designed and constructed. Currently, both systems are the first setup in domestic. Furthermore, performance evaluation methods of the two analysis systems have been developed. GI-XRF and GE-XRF are very valuable techniques for elemental depth profile analysis and microstructure characterization of thin films and multilayers.The zero-angle measurement of GI-XRF analysis has been evaluated using GaAs wafer as the standard reference material. The result showed that determination of zero-angle is fully exact. Moreover, GI-XRF analysis was examined for several times using Ge wafer. The experimental results indicated its advantages of good repeatability and stability. The experimental design is reasonable. Together, these results demonstrate that this system can be suitable for the requirement of GI-XRP analysis. In addition, GI-XRF analysis stage is easily able to be installed and to be performed multidimensional adjustment. Thus, GI-XRF analysis can also be used for Synchrotron Radiation (SR) X-Ray. The analytical results of Magnetic Tunnel Junctions (MTJs) with a nominal structure [Si(substrate)/Ru(50A)/NiFe(40A)ArMn (120A)/CoFe(40A)/Ru(2lA)/CoFeB(40A)/Ru(50A)] using GI-XRP showed that this analysis system has a relative high depth resolving power.On the basis of magnetic properties analysis, elemental depth profile and microstructure characterization of FePt thin films with different annealing state and different thickness of Ta buffer layers and Bi insert layers were investigated by GI-XRF analysis method. The result showed that the cause of magnetic propertieschange was relative to films microstructure. Combined with the XRR analysis, GI-XRF curves of FePt thin films annealed at 500°C with three typical thickness of Ta buffer layers have been calculated. When the FePt films were deposited on the Ta or Bi layers, the diffusion of Ta or Bi polycrystalline atoms into FePt films has been observed. We also found that a relatively higher concentration region of Ta or Bi atoms has generated near the upper surface of FePt layer. During the subsequence annealing process, Ta atoms diffuse continuously into FePt layers from the films with thinner Ta buffer layer. Bi layers even overturn to the upper surface region of FePt layers. The diffusion process of Ta or Bi atoms into FePt layers will promote the formation of the ordering phase and improve the magnetic properties, but the quantity of the impurity atoms in FePt layers should be appropriate.GaAs wafer, as the standard reference material, has been also used for the evaluation of GE-XRF analysis system. The result indicates that a reasonable design with good repeatability and stability can satisfy the requirement of GE-XRF analysis. Synchrotron Radiation (SR) analysis of GE-XRF was carried out. Thus, GE-XRF analysis can also be used for Synchrotron Radiation (SR) X-Ray. The GE-XRF analysis result of GaAs wafer showed that this analysis system has a high angle resolving power.Si\Ni monolayer and Si\Ni\Ti bilayer were studied by GE-XRF. Combined with the XRR analysis, the results of Ni monolayer's density, thickness and roughness were obtained. Meanwhile, the microstructures of both films have been analyzed.