kinetics - Globe Thesis

Keyword [kinetics] Result: 101 - 120 \| Page: 6 of 7
101.	Form: An experiment in the annotation of the kinetics of gesture
102.	Atomistic study of motion of twin boundaries: Nucleation, initiation of motion, and steady kinetics
103.	Reoxidation kinetics of flash reduced iron particles relevant to a novel flash ironmaking process
104.	Population density methods in two spatial dimensions and application to neural networks with realistic synaptic kinetics
105.	Effects of physical exertion and alignment alterations on trans-tibial amputee gait, and concurrent validity of prosthesis-integrated measurement of gait kinetics
106.	Archerite growth morphology and kinetics in the presence of surface adsorbates
107.	Kinetics of Programmable Metallization Cell Memory
108.	Theoretical study of segregation kinetics of indium in indium gallium nitride and magnesium in magnesium-gallium nitride grown by molecular beam epitaxy
109.	Molecular beam epitaxy grown III-nitride materials for high-power and high-temperature applications: Impact of nucleation kinetics on material and device structure quality
110.	A fractal analysis of analyte-receptor binding and dissociation kinetics for biosensor and biomedical applications
111.	Growth kinetics and doping of gallium nitride grown by rf-plasma assisted molecular beam epitaxy
112.	Physicochemical aspects of the kinetics of aggregation: A modeling and experimental study
113.	Silicon (011) and silicon germanium (011) gas-source molecular beam epitaxy: Surface reconstructions, growth kinetics, and germanium segregation
114.	Spectroscopy and kinetics of halogen lasers
115.	Ultra-high B doping during Si(1-x)Ge(x)(001) gas-source molecular-beam epitaxy: A mechanistic study of layer growth kinetics, dopant incorporation, electrical activation, and carrier transport
116.	Enhanced Sampling Methods for the Computation of Conformational Kinetics in Macromolecules
117.	H-mediated film growth and dopant incorporation kinetics during silicon germanium(001):boron gas-source molecular beam epitaxy
118.	Periodic silicon surfaces: I. Kinetics of atomic steps. II. Strain induced by oxidation
119.	Inference for acceleration transforms in stress testing with applications to models based on reliability kinetics
120.	The effects of growth kinetics and thermodynamics on the properties of gallium nitride grown by molecular beam epitaxy
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