Font Size:
a
A
A
Keyword [Nitrides]
Result: 21 - 40 | Page: 2 of 3
21.
Investigation On Strain-compensated AlInGaN Superlattice Materials And Its Applications In Optoelectronic Devices
22.
Research On The Epitaxial Growth And Characterization Of Non-Polar And Semi-Polar Gan-Based Nitrides
23.
Study On Optical Properties Of Nitride Semiconductor Materials Based On Ellipsometry Technique
24.
Study On Nitride-based Resistive Random Access Memory
25.
Study On Ultra-wide Bandgap AlN/AlGaN Heterostructures And HEMT Devices
26.
Fabrication And Ohmic Contact Of Wide Band-gap Semiconductor Materials
27.
High efficiency III-nitrides-based UV/deep-UV light emitting devices of micro/nano-photonic structures
28.
Epitaxial growth of semimetallic hybrid substrate systems for low temperature optoelectronic integration of nitrides on silicon
29.
Growth and characterization of nonpolar and semipolar group-III nitrides-based heterostructures and devices
30.
Growth and characterization of III-nitrides materials system for photonic and electronic devices by metalorganic chemical vapor deposition
31.
Transport issues and multi-functional devices based on nitrides and other polar heterostructures
32.
Novel optical study and application on iii-nitrides
33.
Strain Relaxation in Semipolar III-Nitrides for Light Emitting Diode Applications
34.
High-Power, Low-Droop III-Nitrides Based Blue Light-Emitting Diodes
35.
Theoretical Study of Material and Device Properties of Group-III Nitrides
36.
Study of magnetism in dilute magnetic semiconductors based on III-V nitrides
37.
Growth of III-nitrides by molecular beam epitaxy for heterojunction field effect transistors and optoelectronic applications
38.
Light-emitting Diodes Based on Epitaxy on Non-polar Sidewalls and III-Nitrides Nanowires
39.
High-density plasma etching of III-nitrides: Process development, device applications and damage remediation
40.
Characterization of as-grown and annealed narrow band gap nitrides grown by molecular beam epitaxy
<<First
<Prev
Next>
Last>>
Jump to
